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| (R) SMP75-8 TRISILTM FEATURES Bidirectional surge arrestor. Very low stand-off voltage : VRM = 8 V. High repetitive surge capability : IPP = 75 A (10/1000s). Very low capacitance : C < 75 pF Low leakage current : < 2 A DESCRIPTION The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. SMB (JEDEC DO-214AA) MAIN APPLICATION XDSL TRANSMISSION EQUIPMENT SCHEMATIC DIAGRAM BENEFITS Protection against high energy surges. Very low breakover voltage : VBO < 15 V, thus avoiding saturationof transformer. No signal distortion thanks to very low capacitance. COMPLIESWITHTHE FOLLOWINGSTANDARDS : - BELLCORE TR-NWT -000974: - CCITT K20: - VDE 0433: - VDE 0878: * with series resistor or PTC. 10/1000 s 10/1000 s 10/700 s 5/310 s 10/700 s 5/310 s 1.2/50 s 1/20 s 1 kV 75A * 4 kV 100A 4 kV 100A 4 kV 100A January 1998 - Ed : 2 1/6 SMP75-8 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol Ipp ITSM Peak pulse current Non repetitive surge peak on-state current One cycle Non repetitive surge peak on-state current F = 50Hz TI Tstg Tj Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature Parameter 10/1000s 8/20s 50Hz 60Hz 0.2s 2s Value 75 250 35 37 14 6 260 - 55 to + 150 150 Unit A A A A A A C C C THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions) % IPP Parameter Value 20 100 Unit C/W C/W Note 1: Pulse waveform 10 / 1000 s 8 / 20 s 5 / 310 s 1 / 20 s 2 / 10 s tr = 10 s tr = 8 s tr = 5 s tr = 1 s tr = 2 s tp = 1000 s tp = 20 s tp = 310 s tp = 20 s tp = 10 s 100 50 0 tr tp ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance 2/6 (R) SMP75-8 STATIC PARAMETERS Type IRM @ VRM max. A SMP75-8 2 V 6 IR @ VR max. note 1 A 50 V 8 VBO @ IBO max. note 2 V 15 mA 800 IH typ. note 3 mA 50 C max. note 4 pF 75 Note 1 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. In any case VBOmin VBR Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. DYNAMIC PARAMETERS Symbol Test conditions (see note 5) Test conditions 1 VRISE = 100 V/s, di/dt < 10 A/s, IPP = 75 A VBO Test conditions 2 VRISE = 1 kV/s, di/dt < 10 A/s, IPP = 10 A Note 5 : VBO parameters are given by a KeyTek 'System 2' generator with PN246I module. See test circuits (3) for VBO dynamic parameters. Type Max. Unit SMP75-8 20 V TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . 3/6 (R) SMP75-8 FUNCTIONAL HOLDING CURRENT (IH ) TEST CIRCUIT 2: GO-NO GO TEST R D.U.T. - VP V BAT = - 6 V Surge generator This is a GO-NO GO test which allows to confirm the holdingcurrent (IH) level in a functionaltest circuit. TEST PROCEDURE : - Adjust the current level at the I H value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the OFF-state within a duration of 50 ms max. TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS 100 V / s,Ipp = 75A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s,Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 4/6 (R) SMP75-8 TYPICAL APPLICATION : T1 / E1 protection DA108S1 +Vcc RTIP 5V RX LINE +Vcc RRING 0V SMP75-8 +Vcc IC TTIP +Vcc SM6T6V8A TX LINE TRING SMP75-8 The above schematic shows a T1 / E1 application circuit. This type of line protection may be used in premises equipment or telephone company equipment on ports directly connected to metallic plant lines. During the lightning surge, the low voltage Trisil SMP75-8 provides an efficient crowbar protection on the primary side of the transformer. The SMP75-8 has a maximum peak pulse current of 75A (10/1000s pulse) and a maximum breakover voltage of 15V. This low voltage prevents the transformer to be satured when a surge occurs on the line. Additionally, the low capacitance (65pF) is required to avoid significant signal degradation in the case of high speed digital pulses. To protect the IC line interface from the remaining energy which is coupled through the transformer, additional voltage protection is recommended on the line input / output pins of the IC. The diode array DA108S1 connected between +Vcc and GND is then used to limit the remaining overvoltage within a safe level. The DA108S1 is especially dedicated to this application because. Its fast response time and low forward voltage drop enable it to clamp any surge before the IC line interface internal protection fails. Additionally, the low capacitance (30pF) is required to prevent signal degradation of the high speed datd. The DA108S1 is a fully integrated (1 chip) device and results from the ST ASDTM(Application Specific Discretes) technology. ASDsTM combine the functions of several components into a single monolithic device that is tailored to meet the exact requirement of a specific application, allowing higher density and improved reliability. ORDER CODE SMP 75 - 8 SURFACE MOUNT TRISIL 75 A VOLTAGE 5/6 (R) SMP75-8 Non repetitive surge peak current versus overload duration. ITSM (A) 50 45 40 35 30 25 20 15 10 5 0 1E-2 1E-1 F=50Hz Tj initial=25C MARKING Package SMB Type SMP75-8 Marking L08 t(s) 1E+0 1E+1 1E+2 1E+3 PACKAGE MECHANICAL DATA SMB (JEDEC DO-214AA)(Plastic) E1 DIMENSIONS REF. A1 A2 b c E E1 c A1 A2 L b Millimeters Inches Min. Typ. Max. Min. Typ. Max. D 1.90 2.15 2.45 0.075 0.085 0.096 0.05 0.15 0.20 0.002 0.006 0.008 1.95 2.20 0.077 0.087 0.15 0.41 0.006 0.016 5.10 5.40 5.60 0.201 0.213 0.220 4.05 4.30 4.60 0.159 0.169 0.181 3.30 3.60 3.95 0.130 0.142 0.156 0.75 1.15 1.60 0.030 0.045 0.063 E D L FOOT PRINT (in millimeters) Packaging : tape and reel Weight : 0.12g 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany -Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 (R) |
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